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氧化镓的高击穿场强和高电子饱和速度使其非常适合制造高频、高压的射频功率器件。在5G通信基站和终端设备中，氧化镓基场效应晶体管（FET）等器件可用于高频信号放大，满足5G高频段（如毫米波频段）对功率和频率的严苛要求。相比传统材料，氧化镓器件在相同耐压等级下具有更低的导通电阻和更高的开关速度，有助于提升射频前端的整体效率。

β-Ga₂O₃'s high breakdown field strength and high electron saturation velocity make it ideal for manufacturing high-frequency, high-voltage RF power devices. In 5G base stations and terminal equipment, β-Ga₂O₃-based field-effect transistors (FETs) and other devices can be used for high-frequency signal amplification, meeting the stringent power and frequency requirements of 5G high-frequency bands such as millimeter-wave. Compared with conventional materials, β-Ga₂O₃ devices offer lower on-resistance and faster switching speeds at the same voltage rating, helping to improve the overall efficiency of the RF front end.