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杭州镓仁半导体有限公司成立于2022年9月，位于浙江省杭州市萧山区，是一家专注于宽禁带半导体氧化镓单晶材料及设备研发、生产与销售的科技型企业。公司依托浙江大学硅及先进半导体材料全国重点实验室和浙江大学杭州国际科创中心，已建成以中国科学院院士为首席顾问，具备丰富行业经验的研发、生产、运营团队。

镓仁半导体首创铸造法等氧化镓单晶生长新技术，是全球首家实现多技术路线、多晶面8英寸氧化镓衬底制备的厂商，也是国内首家推出氧化镓VB法专用长晶设备的厂商。公司已建成全球首条6/8英寸氧化镓同质外延片量产线，商用6英寸外延片向全球头部厂商稳定批量供货。

目前，公司已掌握氧化镓晶体生长、衬底加工、外延生长等全链条核心技术，累计获得国内外发明专利20余项。

Founded in September 2022 and headquartered in Xiaoshan District, Hangzhou, Zhejiang Province, Garen is a technology-driven company dedicated to the R&D, production, and sale of gallium oxide (Ga₂O₃) single-crystal materials and equipment for wide-bandgap semiconductors. Leveraging the State Key Laboratory of Silicon and Advanced Semiconductor Materials at Zhejiang University and the ZJU-Hangzhou International Innovation Center, Garen has built an R&D, production, and operations team with extensive industry experience, led by an academician of the Chinese Academy of Sciences as chief advisor.

Garen pioneered novel Ga₂O₃ single-crystal growth technologies, including the casting method. It is the world's first manufacturer to produce 8-inch Ga₂O₃ substrates across multiple technology routes and crystal orientations, and the first in China to launch dedicated vertical Bridgman (VB) crystal growth equipment for Ga₂O₃. The company has also established the world's first mass-production line for 6/8-inch Ga₂O₃ homoepitaxial wafers, with commercial 6-inch epitaxial wafers now supplied in stable volumes to leading global customers. To date, the company has mastered core technologies spanning the full value chain—from Ga₂O₃ crystal growth and substrate processing to epitaxial growth—and holds more than 20 invention patents granted in China and abroad.